类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大结点温度(Tj) | 场效应管特性 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | BSD235NH6327XTSA1 | Infineon Technologies | 数据表 | 4 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 6-VSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | 4.5 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 雪崩 额定 | 500mW | 鸥翼 | BSD235 | AEC-Q101 | 增强型MOSFET | 500mW | 3.8 ns | 2 N-Channel (Dual) | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | 无卤素 | 63pF @ 10V | 0.32nC @ 4.5V | 3.6ns | 950mA | 700mV | 12V | 20V | 0.95A | 0.35Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1mm | 2mm | 1.25mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
EFC4627R-TR | ON Semiconductor | 数据表 | 11763 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 4-XFBGA, FCBGA | 150°C TJ | Tape & Reel (TR) | yes | 活跃 | 1 (Unlimited) | EAR99 | 1.4W | 未说明 | 未说明 | 2 N-Channel (Dual) Common Drain | 13.4nC @ 4.5V | Logic Level Gate, 2.5V Drive | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMC6070LFDH-7 | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-WDFN | 8 | SILICON | 3.1A 2.4A | 2 | 61 ns | -55°C~150°C TJ | Cut Tape (CT) | 2013 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.4W | DUAL | AEC-Q101 | 增强型MOSFET | 1.4W | 9.6 ns | N and P-Channel | SWITCHING | 85m Ω @ 1.5A, 10V | 3V @ 250μA | 731pF @ 20V | 11.5nC @ 10V | N-CHANNEL AND P-CHANNEL | 2.4A | 20V | 3.1A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 800μm | 3.05mm | 3.05mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
BSL314PEH6327XTSA1 | Infineon Technologies | 数据表 | 32910 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 500mW | 鸥翼 | 未说明 | 未说明 | 增强型MOSFET | 500mW | 2 P-Channel (Dual) | 140m Ω @ 1.5A, 10V | 2V @ 6.3μA | 无卤素 | 294pF @ 15V | 2.9nC @ 10V | 3.9ns | 30V | 1.5A | 20V | -30V | 0.14Ohm | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | 11 pF | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSC750N10NDGATMA1 | Infineon Technologies | 数据表 | 400 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Tin | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 3.2A | 2 | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | OptiMOS™ | e3 | no | Obsolete | 1 (Unlimited) | 6 | EAR99 | 雪崩 额定 | FLAT | BSC750N10 | 8 | R-PDSO-F6 | 2 | 增强型MOSFET | 26W | DRAIN | 9 ns | 2 N-Channel (Dual) | SWITCHING | 75m Ω @ 13A, 10V | 4V @ 12μA | 无卤素 | 720pF @ 50V | 11nC @ 10V | 4ns | 13A | 3V | 20V | 100V | 0.075Ohm | 100V | 17 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 1mm | 无 | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | IRF8910TRPBF | Infineon Technologies | 数据表 | 410 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 2 | 9.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | 活跃 | 1 (Unlimited) | SMD/SMT | EAR99 | 13.4MOhm | 20V | 2W | 10A | IRF8910PBF | Dual | 增强型MOSFET | 2W | 6.2 ns | 2 N-Channel (Dual) | 13.4m Ω @ 10A, 10V | 2.55V @ 250μA | 960pF @ 10V | 11nC @ 4.5V | 10ns | 4.1 ns | 10A | 2.55V | 20V | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.55 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD1115SAL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 0°C~70°C TJ | Tube | 2006 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 500mW | 鸥翼 | unknown | Dual | 增强型MOSFET | 500mW | N and P-Channel Complementary | SWITCHING | 1800 Ω @ 5V | 1V @ 1μA | 3pF @ 5V | 10.6V | N-CHANNEL AND P-CHANNEL | -2mA | 13.2V | 500Ohm | -12V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD110804SCL | Advanced Linear Devices Inc. | 数据表 | 38 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | 16 | 12mA 3mA | 10 ns | 0°C~70°C TJ | Tube | 2006 | EPAD® | yes | 活跃 | 1 (Unlimited) | 500mW | unknown | 500mW | 4 N-Channel, Matched Pair | 500 Ω @ 4.4V | 420mV @ 1μA | 2.5pF @ 5V | 3mA | 10.6V | 10V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SP8M8TB | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 6A 4.5A | 2 | 150°C TJ | Tape & Reel (TR) | 2006 | e2 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 2W | DUAL | 鸥翼 | 260 | 6A | 10 | *M8 | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 30m Ω @ 6A, 10V | 2.5V @ 1mA | 520pF @ 10V | 7.2nC @ 5V | 25ns | 30V | N-CHANNEL AND P-CHANNEL | 4.5A | 6A | 0.047Ohm | 24A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
SP8M70TB1 | ROHM Semiconductor | 数据表 | 539 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 3A 2.5A | 150°C TJ | Tape & Reel (TR) | 2013 | 最后一次购买 | 1 (Unlimited) | EAR99 | 650mW | 未说明 | not_compliant | 未说明 | N and P-Channel | 1.63 Ω @ 1.5A, 10V | 4V @ 1mA | 180pF @ 25V | 5.2nC @ 10V | 250V | N-CHANNEL AND P-CHANNEL | 2.5A | 3A | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI9955DY | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 3A | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | SI9955D | 900mW | 2 N-Channel (Dual) | 130mOhm @ 3A, 10V | 1V @ 250μA | 345pF @ 15V | 30nC @ 10V | 50V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMD63N03XTC | Diodes Incorporated | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | 139.989945mg | SILICON | 2 | 9.6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | Obsolete | 1 (Unlimited) | 8 | HIGH RELIABILITY | 30V | 870mW | 鸥翼 | unknown | 2.4A | 8 | AEC-Q101 | 2 | 增强型MOSFET | 870mW | 2.5 ns | 1.04W | 2 N-Channel (Dual) | SWITCHING | 135m Ω @ 1.7A, 10V | 1V @ 250μA (Min) | 290pF @ 25V | 8nC @ 10V | 4.1ns | 4.1 ns | 2.3A | 20V | 0.135Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 950μm | 3.1mm | 3.1mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
IRF810 | Harris Corporation | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | Harris Corporation | 活跃 | * | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FDZ2553N | ON Semiconductor | 数据表 | 134873 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 18-WFBGA | 18 | 29 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 20V | 2.1W | 9.6A | 2.1W | 2 N-Channel (Dual) | 14m Ω @ 9.6A, 4.5V | 1.5V @ 250μA | 1299pF @ 10V | 17nC @ 4.5V | 11ns | 11 ns | 9.6A | 12V | 20V | 逻辑电平门 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ECH8672-TL-H | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SMD, Flat Lead | YES | 8 | 37 ns | 150°C TJ | Tape & Reel (TR) | 2012 | e6 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 1.5W | 8 | Dual | 1.3W | 7.1 ns | 2 P-Channel (Dual) | 85m Ω @ 1.5A, 4.5V | 无卤素 | 320pF @ 10V | 4nC @ 4.5V | 21ns | 20V | 32 ns | 3.5A | 10V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOC2802 | Alpha & Omega Semiconductor Inc. | 数据表 | 5999 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 4-UFBGA, WLCSP | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 1.3W | 2 N-Channel (Dual) Common Drain | 10.4nC @ 4.5V | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N7002BFU,LF | Toshiba Semiconductor and Storage | 数据表 | 258000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | SILICON | 2 | 150°C TJ | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | 6 | 300mW | 鸥翼 | unknown | SSM6N7002 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 150mW | 2 N-Channel (Dual) | SWITCHING | 2.1 Ω @ 500mA, 10V | 3.1V @ 250μA | 17pF @ 25V | 60V | 200mA | 20V | 0.2A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
USB10H | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | SuperSOT™-6 | 1.9A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 700mW | 2 P-Channel (Dual) | 170mOhm @ 1.9A, 4.5V | 1.5V @ 250μA | 441pF @ 10V | 4.2nC @ 4.5V | 20V | 逻辑电平门 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON6973A | Alpha & Omega Semiconductor Inc. | 数据表 | 12105 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 8-DFN (5x6) | 22A 30A | -55°C~150°C TJ | Digi-Reel® | 2011 | SRFET™ | Obsolete | 1 (Unlimited) | 150°C | -55°C | 4.3W | 3.6W 4.3W | 2 N-Channel (Half Bridge) | 5.2mOhm @ 20A, 10V | 2.2V @ 250μA | 1037pF @ 15V | 22nC @ 10V | 30V | 30A | 1.037nF | 逻辑电平门 | 5.2 mΩ | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VEC2616-TL-H-Z-W | ON Semiconductor | 数据表 | 30 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 7 Weeks | Tape & Reel (TR) | 活跃 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMC4A16DN8TC | Diodes Incorporated | 数据表 | 9200 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | SILICON | 5.2A Ta 4.7A Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1.25W | DUAL | 鸥翼 | 260 | 30 | 8 | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2.1W | N and P-Channel Complementary | SWITCHING | 50m Ω @ 4.5A, 10V, 60m Ω @ 3.8A, 10V | 1V @ 250mA (Min) | 770pF @ 40V 1000pF @ 20V | 17nC @ 10V | 40V | N-CHANNEL AND P-CHANNEL | 3.6A | 4A | 0.05Ohm | 24A | 40V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMDPB42UN,115 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 6-UDFN Exposed Pad | 3.9A | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | Obsolete | 1 (Unlimited) | 6 | 510mW | 2 N-Channel (Dual) | 50m Ω @ 3.9A, 4.5V | 1V @ 250μA | 185pF @ 10V | 3.5nC @ 4.5V | 20V | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NX6020CAKSX | Nexperia USA Inc. | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 170mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 活跃 | 330mW | N and P-Channel | 4.5 Ω @ 100mA, 10V, 7.5 Ω @ 100mA, 10V | 2.1V @ 250μA | 17pF @ 10V 36pF @ 25V | 0.43nC @ 4.5V, 0.35nC @ 5V | 60V 50V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD1107PBL | Advanced Linear Devices Inc. | 数据表 | 98 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 通孔 | 通孔 | 14-DIP (0.300, 7.62mm) | 14 | SILICON | 4 | 0°C~70°C TJ | Tube | 2012 | yes | 活跃 | 1 (Unlimited) | 14 | EAR99 | 500mW | DUAL | unknown | COMMON SUBSTRATE, 4 ELEMENTS | 增强型MOSFET | 500mW | 4 P-Channel, Matched Pair | SWITCHING | 1800 Ω @ 5V | 1V @ 1μA | 3pF @ 5V | 10.6V | 2mA | -13.2V | -12V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSL308CL6327HTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | SILICON | 2.3A 2A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | 雪崩 额定 | 500mW | DUAL | 鸥翼 | AEC-Q101 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | 80m Ω @ 2A, 10V | 2V @ 11μA | 275pF @ 15V | 500nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 2A | 20V | 2.3A | 0.057Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 17 pF | 无 | 符合RoHS标准 |
BSD235NH6327XTSA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
EFC4627R-TR
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
3.513365
DMC6070LFDH-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
BSL314PEH6327XTSA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
BSC750N10NDGATMA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF8910TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
ALD1115SAL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
ALD110804SCL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
66.849109
SP8M8TB
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
SP8M70TB1
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
SI9955DY
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
ZXMD63N03XTC
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
IRF810
Harris Corporation
分类:Transistors - FETs, MOSFETs - Arrays
FDZ2553N
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
7.674319
ECH8672-TL-H
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
AOC2802
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
SSM6N7002BFU,LF
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
USB10H
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
AON6973A
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
VEC2616-TL-H-Z-W
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
2.983577
ZXMC4A16DN8TC
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
PMDPB42UN,115
NXP USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
NX6020CAKSX
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
ALD1107PBL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
56.483182
BSL308CL6327HTSA1
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
